FDC658AP
Manufacturer:
On Semiconductor
Mfr.Part #:
FDC658AP
Datasheet:
Description:
MOSFETs TSOT-23-6 SMD/SMT P-Channel number of channels:1 1.6 W -30 V Continuous Drain Current (ID):4 A 8.1 nC
| Parameter | Value |
|---|---|
| Length | 3 mm |
| Width | 1.7 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 50 mΩ |
| Height | 900 µm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 0.036 g |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 1.6 W |
| Power Dissipation | 1.6 W |
| Threshold Voltage | -1.8 V |
| Number of Channels | 1 |
| Input capacitance | 470 pF |
| Continuous Drain Current (ID) | 4 A |
| Rds On Max | 50 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 7 ns |
| Turn-Off Delay Time | 16 ns |
| Element Configuration | Single |
| Rise Time | 12 ns |
| Dual Supply Voltage | -30 V |
| Gate Charge | 8.1 nC |
| Drain to Source Resistance | 44 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | -1.8 V |
| Gate to Source Voltage (Vgs) | 25 V |
| Drain to Source Breakdown Voltage (Vds) | -30 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 3 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 520
Distributors
pcbx
pcbxUnit Price$0.32208
Ext.Price$0.32208
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.32208 | $0.32208 |
| 10 | $0.28435 | $2.84350 |
| 25 | $0.27264 | $6.81600 |
| 50 | $0.26141 | $13.07050 |
| 100 | $0.25065 | $25.06500 |
| 300 | $0.22488 | $67.46400 |
| 500 | $0.20176 | $100.88000 |
| 1000 | $0.19710 | $197.10000 |